TEMPERATURE-DEPENDENT LIFETIME DISTRIBUTION OF THE PHOTOLUMINESCENCE S-BAND IN POROUS SILICON

被引：52
作者：
MAUCKNER, G
THONKE, K
BAIER, T
WALTER, T
SAUER, R
机构：
[1] Abteilung Halbleiterphysik, Universität Ulm
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 08期
关键词：
D O I：
10.1063/1.355999
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the recombination mechanism of the visible photoluminescence (PL) S-band in p-doped porous Si layers by time-resolved photoluminescence. From the observed ''stretched-exponential'' PL decays we present a simple yet accurate evaluation method for lifetime distributions G(tau) and average recombination lifetimes [tau]. The average lifetimes feature a strong temperature dependence and a characteristic thermal activation energy of 10-20 meV for low temperatures. Our results are discussed within the models of quantum-confined exciton recombination and surface state recombination.
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页码：4167 / 4170
页数：4
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