A NEW CHEMICAL METHOD FOR PREPARING SEMICONDUCTOR GRADE ANTIMONY TRISULFIDE THIN-FILMS

被引:32
作者
MANDAL, KC
MONDAL, A
机构
[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
[2] JADAVPUR UNIV,SCH ENERGY STUDIES,DEPT ELECTR & TELECOMMUN ENGN,CALCUTTA 700032,W BENGAL,INDIA
关键词
antimony tri-sulphide; Chemical deposition; thin films;
D O I
10.1016/0022-3697(90)90014-7
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report the morphology, structural, optical and electrical properties of antimony tri-sulphide thin films deposited for the first time on a glass substrate by a simple chemical method using potassium antimonyl tartarate (PAT), triethanolamine (TEA), ammonia and thioacetamide (TAM). © 1990.
引用
收藏
页码:1339 / 1341
页数:3
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