A NEW CHEMICAL METHOD FOR PREPARING SEMICONDUCTOR GRADE ANTIMONY TRISULFIDE THIN-FILMS

被引：32

作者：

MANDAL, KC

MONDAL, A

机构：

[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA

[2] JADAVPUR UNIV,SCH ENERGY STUDIES,DEPT ELECTR & TELECOMMUN ENGN,CALCUTTA 700032,W BENGAL,INDIA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1990年 / 51卷 / 11期

关键词：

antimony tri-sulphide; Chemical deposition; thin films;

D O I：

10.1016/0022-3697(90)90014-7

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the morphology, structural, optical and electrical properties of antimony tri-sulphide thin films deposited for the first time on a glass substrate by a simple chemical method using potassium antimonyl tartarate (PAT), triethanolamine (TEA), ammonia and thioacetamide (TAM). © 1990.

引用

页码：1339 / 1341

页数：3

共 17 条

[1]

ABLOVA MS, 1976, SOV PHYS SEMICOND+, V10, P629

[2] ELECTRONIC WAVE-FUNCTIONS IN SEMICONDUCTOR CLUSTERS - EXPERIMENT AND THEORY [J].