MONOLITHIC HYBRID MODE-LOCKED 1.3-MU-M SEMICONDUCTOR-LASERS

被引：45

作者：

MORTON, PA ^{[1
]}

BOWERS, JE ^{[1
]}

KOSZI, LA ^{[1
]}

SOLER, M ^{[1
]}

LOPATA, J ^{[1
]}

WILT, DP ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 02期

关键词：

D O I：

10.1063/1.103046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe the first results of hybrid mode locking combining both active and passive mode locking of a semiconductor laser. These functions are integrated into a monolithic device with a 1.3 μm GaInAsP gain region, an active waveguide, and a saturable absorber. The devices have low threshold currents, and exhibit hysteresis in their light/current characteristics. The long integrated waveguides allow mode locking at a repetition rate of 15 GHz without the need for an external cavity. Pulse widths as short as 1.4 ps have been demonstrated using the combined effects of active and passive mode locking.

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页码：111 / 113

页数：3

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