CONSISTENT MODEL FOR THE HOT-CARRIER DEGRADATION IN N-CHANNEL AND P-CHANNEL MOSFETS

被引：286
作者：
HEREMANS, P
BELLENS, R
GROESENEKEN, G
MAES, HE
机构：
[1] Interuniv Micro-Electronies Cent, Louvain, Belg
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期
关键词：
Manuscript received April 13; 1988; revised July 10; 1988. P. Here-mans is a research assistant of the Belgian National Fund for Scientific Research. This work was supported by BTMC Alcatel within an IWONL project. The authors are with the Interuniversity Micro-Electronics Center (IMEC). Kapeldreef 75; B-3030; Leuven; Belgium. IEEE Log Number 8823785;
D O I：
10.1109/16.8794
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
34
引用
收藏
页码：2194 / 2209
页数：16
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