LOW FREQUENCY OSCILLATIONS IN SEMI-INSULATING GALLIUM ARSENIDE

被引:47
作者
SACKS, HK
MILNES, AG
机构
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D O I
10.1080/00207217008900175
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:565 / +
页数:1
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共 27 条
[1]  
BAGAEV VS, 1968, SOV PHYS SEMICOND+, V2, P700
[2]  
BARRAUD A, 1963, CR HEBD ACAD SCI, V256, P3632
[3]  
BARRAUD A, 1967, THESIS
[4]  
BLAKEMORE, 1962, SEMICONDUCTOR STATIS, pCH3
[5]  
BONCHBRUEVICH VL, 1959, FIZ TVERD TELA, P182
[6]   A SIMPLE ANALYSIS OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].
BUTCHER, PN ;
FAWCETT, W ;
HILSUM, C .
BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (07) :841-&
[7]   STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].
BUTCHER, PN ;
FAWCETT, W .
BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (11) :1425-&
[8]   HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS [J].
CONWELL, EM ;
VASSELL, MO .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :22-+
[9]   STABLE SPACE-CHARGE LAYERS IN 2-VALLEY SEMICONDUCTORS [J].
COPELAND, JA .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3602-+
[10]   DOMAIN PROPERTIES IN GAAS OSCILLATING AT KHZ FREQUENCIES [J].
DORMAN, PW .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03) :372-+