STRUCTURAL-PROPERTIES OF BISMUTH-BEARING SEMICONDUCTOR ALLOYS

被引:52
作者
BERDING, MA
SHER, A
CHEN, AB
MILLER, WE
机构
[1] AUBURN UNIV,AUBURN,AL 36849
[2] NASA,LANGLEY RES CTR,HAMPTON,VA 23665
关键词
D O I
10.1063/1.340499
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:107 / 115
页数:9
相关论文
共 24 条
[1]  
[Anonymous], ELECTRONIC STRUCTURE
[2]   PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].
BACHELET, GB ;
HAMANN, DR ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228
[3]   VACANCY FORMATION ENERGIES IN II-VI SEMICONDUCTORS [J].
BERDING, MA ;
SHER, A ;
CHEN, AB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05) :3009-3013
[4]   SEMICONDUCTOR PSEUDOBINARY ALLOYS - BOND-LENGTH RELAXATION AND MIXING ENTHALPIES [J].
CHEN, AB ;
SHER, A .
PHYSICAL REVIEW B, 1985, 32 (06) :3695-3711
[5]  
CHEN AB, 1983, MICROSCIENCE, V3, P1
[6]  
CHEN AB, 1985, MATER RES SOC S P, V46, P137
[7]   THERMODYNAMIC PROPERTIES OF TERNARY SEMICONDUCTING ALLOYS [J].
CZYZYK, MT ;
PODGORNY, M ;
BALZAROTTI, A ;
LETARDI, P ;
MOTTA, N ;
KISIEL, A ;
ZIMNALSTARNAWSKA, M .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1986, 62 (02) :153-161
[8]  
GORYUNOVA NA, 1968, SEMICONDUCTORS SEMIM
[9]  
HARRISON W, 1983, MICROSCIENCE, V3, P35
[10]   PROPERTIES OF INSB(1-X)BI(X) ALLOYS .I. ELECTRICAL MEASUREMENTS [J].
JEANLOUIS, AM ;
HAMON, C .
PHYSICA STATUS SOLIDI, 1969, 34 (01) :329-+