NONDESTRUCTIVE ANALYSIS OF SILICON-ON-INSULATOR WAFERS

被引：17
|
作者：
BUNKER, SN
SIOSHANSI, P
SANFACON, MM
TOBIN, SP
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 26期
关键词：
D O I：
10.1063/1.97680
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1900 / 1902
页数：3
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