EFFECT OF PARAMAGNETIC-RESONANCE ON ELECTRONCONDUCTIVITY OF SEMICONDUCTORS IN HIGH ELECTRIC-FIELDS

被引：0
作者：
ZAITSEV, AN
机构：
来源：
FIZIKA TVERDOGO TELA | 1973年 / 15卷 / 03期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：733 / 739
页数：7
相关论文
共 15 条
[1]  
ABULADZE AD, 1971, FIZ TVERD TELA, V13, P1981
[2]  
Gasymov T. M., 1969, Fizika Tverdogo Tela, V11, P2946
[3]   NEUTRAL-IMPURITY SCATTERING AND IMPURITY ZEEMAN SPECTROSCOPY IN SEMICONDUCTORS USING HIGHLY SPIN-POLARIZED CARRIERS [J].
HONIG, A .
PHYSICAL REVIEW LETTERS, 1966, 17 (04) :186-&
[4]  
KONUELL E, 1970, KINETICHESKIE SVOIST
[5]   NEUTRAL-IMPURITY SCATTERING EXPERIMENTS IN SILICON WITH HIGHLY SPIN-POLARIZED ELECTRONS [J].
MAXWELL, R ;
HONIG, A .
PHYSICAL REVIEW LETTERS, 1966, 17 (04) :188-&
[6]  
PAVLOV ST, 1965, ZH EKSP TEOR FIZ, V49, P1664
[7]  
SOLOMON I, 1965, PHYS REV LETT, V15, P667
[8]   SPIN DEPENDENT CONDUCTIVITY IN P-DOPED SI [J].
TOYODA, Y ;
HAYASHI, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1971, 30 (05) :1511-&
[9]   BOLOMETRIC DETECTION OF ESR IN P-DOPED SI AT LOW TEMPERATURE [J].
TOYODA, Y ;
HAYASHI, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1970, 29 (01) :247-&
[10]   RESISTIVITY CHANGE DUE TO ESR OF DONOR ELECTRONS IN P-DOPED SILICON AT INTERMEDIATE REGION OF IMPURITY CONDUCTION .1. [J].
TOYODA, Y ;
HAYASHI, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 33 (03) :718-&
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