ELECTRON LOCALIZATION IN DISORDERED SYSTEMS (ANDERSON TRANSITION)

被引:31
作者
EFROS, AL
机构
来源
USPEKHI FIZICHESKIKH NAUK | 1978年 / 126卷 / 01期
关键词
D O I
10.3367/UFNr.0126.197809b.0041
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:41 / 65
页数:25
相关论文
共 60 条
[1]   SELF-CONSISTENT THEOY OF LOCALIZATION .2. LOCALIZATION NEAR BAND EDGES [J].
ABOUCHACRA, R ;
THOULESS, DJ .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (01) :65-75
[2]   NATURE OF ELECTRONIC STATES OF DISORDERED SYSTEM .1. LOCALIZED STATES [J].
ABRAM, RA ;
EDWARDS, SF .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (11) :1183-+
[3]   LOCALIZED STATES IN INVERTED SILICON-SILICON DIOXIDE INTERFACES [J].
ABRAM, RA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (20) :L379-L381
[4]   SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE GROUP 4 SEMICONDUCTORS [J].
ALEXANDER, MN ;
HOLCOMB, DF .
REVIEWS OF MODERN PHYSICS, 1968, 40 (04) :815-+
[6]   ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J].
ANDERSON, PW .
PHYSICAL REVIEW, 1958, 109 (05) :1492-1505
[7]  
Bell R. J., 1970, DISCUSS FARADAY SOC, V50, P55, DOI DOI 10.1039/DF9705000055
[8]  
BEREZINSKII VL, 1973, ZH EKSP TEOR FIZ+, V65, P1251
[9]  
BONCHBRUEVICH VL, 1965, FIZIKA TVERDOGO TELA