VELOCITY OF TWINNING PARTIAL DISLOCATIONS IN SILICON

被引：31

作者：

YASUTAKE, K

SHIMIZU, S

UMENO, M

KAWABE, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.338146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：940 / 946

页数：7

共 27 条

[1] INVESTIGATIONS OF WELL DEFINED DISLOCATIONS IN SILICON [J].

ALEXANDER, H ;

KISIELOWSKIKEMMERICH, C ;

WEBER, ER .

PHYSICA B & C, 1983, 116 (1-3) :583-593

[2] TEM OF DISLOCATIONS UNDER HIGH STRESS IN GERMANIUM AND DOPED SILICON [J].

ALEXANDER, H ;

EPPENSTEIN, H ;

GOTTSCHALK, H ;

WENDLER, S .

JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN) :13-21

[3]

Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[4] THE PLASTIC-DEFORMATION OF SILICON BETWEEN 300-DEGREES-C AND 600-DEGREES-C [J].

CASTAING, J ;

VEYSSIERE, P ;

KUBIN, LP ;

RABIER, J .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (06) :1407-1413

[5] DEFORMATION TWINNING IN MATERIALS OF THE A4 (DIAMOND) CRYSTAL STRUCTURE [J].

CHURCHMAN, AT ;

GEACH, GA ;

WINTON, J .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 238 (1213) :194-&

[6] ELECTRON-MICROSCOPE INVESTIGATION OF MICROPLASTIC DEFORMATION MECHANISMS OF SILICON BY INDENTATION [J].

EREMENKO, VG ;

NIKITENK.VI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (01) :317-330

[7]

EROFEEV VN, 1971, SOV PHYS JETP-USSR, V33, P963

[8]

FISHCHER A, 1978, KRIST TECH, V13, P10

[9] VELOCITIES OF SCREW AND 60-DEGREES DISLOCATIONS IN N-TYPE AND P-TYPE SILICON [J].

GEORGE, A ;

CHAMPIER, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (02) :529-540

[10]

IMAI M, 1983, PHILOS MAG A, V47, P599, DOI 10.1080/01418618308245248

← 1 2 3 →