ENHANCED OPTICAL-PROPERTIES IN POROUS SILICON MICROCAVITIES

被引：101
作者：
PELLEGRINI, V
TREDICUCCI, A
MAZZOLENI, C
PAVESI, L
机构：
[1] IST NAZL FIS MAT,I-56126 PISA,ITALY
[2] TRENT UNIV,IST NAZL FIS MOLEC,I-38050 TRENT,ITALY
[3] TRENT UNIV,DIPARTIMENTO FIS,I-38050 TRENT,ITALY
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 20期
关键词：
D O I：
10.1103/PhysRevB.52.R14328
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the experimental investigation of the optical properties of porous silicon embedded in a planar microcavity structure in which both the active layer and the two Bragg reflectors are fabricated by electrochemical processing of a p-type porous silicon wafer. By tuning the cavity resonance energy around the maximum of the porous silicon emission we have observed photoluminescence linewidths as narrow as 18-25 meV and an intensity enhancement of more than one order of magnitude. The experimental results are clarified by theoretical calculations performed with the standard transfer-matrix approach in the framework of a porous silicon quantum-box model.
引用
收藏
页码：14328 / 14331
页数：4
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