ENHANCED OPTICAL-PROPERTIES IN POROUS SILICON MICROCAVITIES

被引：101
作者：
PELLEGRINI, V
TREDICUCCI, A
MAZZOLENI, C
PAVESI, L
机构：
[1] IST NAZL FIS MAT,I-56126 PISA,ITALY
[2] TRENT UNIV,IST NAZL FIS MOLEC,I-38050 TRENT,ITALY
[3] TRENT UNIV,DIPARTIMENTO FIS,I-38050 TRENT,ITALY
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 20期
关键词：
D O I：
10.1103/PhysRevB.52.R14328
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the experimental investigation of the optical properties of porous silicon embedded in a planar microcavity structure in which both the active layer and the two Bragg reflectors are fabricated by electrochemical processing of a p-type porous silicon wafer. By tuning the cavity resonance energy around the maximum of the porous silicon emission we have observed photoluminescence linewidths as narrow as 18-25 meV and an intensity enhancement of more than one order of magnitude. The experimental results are clarified by theoretical calculations performed with the standard transfer-matrix approach in the framework of a porous silicon quantum-box model.
引用
收藏
页码：14328 / 14331
页数：4
相关论文
共 50 条
  • [21] ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF SILICON CRYSTALLITES - APPLICATION TO POROUS SILICON
    PROOT, JP
    DELERUE, C
    ALLAN, G
    APPLIED PHYSICS LETTERS, 1992, 61 (16) : 1948 - 1950
  • [22] OPTICAL-PROPERTIES OF POROUS SILICON - A 1ST-PRINCIPLES STUDY
    BUDA, F
    KOHANOFF, J
    PARRINELLO, M
    PHYSICAL REVIEW LETTERS, 1992, 69 (08) : 1272 - 1275
  • [23] Multiparametric gas sensors with porous silicon optical microcavities
    Gaburro, Z
    Faglia, G
    Baratto, C
    Sberveglieri, G
    Pavesi, L
    2001 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOL 1 & 2, PROCEEDINGS, 2001, : 19 - 22
  • [24] HYDROGEN TERMINATION AND OPTICAL-PROPERTIES OF POROUS SILICON - PHOTOCHEMICAL ETCHING EFFECT
    KANEMITSU, Y
    MATSUMOTO, T
    FUTAGI, T
    MIMURA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B): : 411 - 414
  • [25] CORRELATION OF THE STRUCTURAL AND OPTICAL-PROPERTIES OF LUMINESCENT, HIGHLY OXIDIZED POROUS SILICON
    CULLIS, AG
    CANHAM, LT
    WILLIAMS, GM
    SMITH, PW
    DOSSER, OD
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) : 493 - 501
  • [26] Porous silicon microcavities as optical and electrical chemical sensors
    Mulloni, V
    Gaburro, Z
    Pavesi, L
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000, 182 (01): : 479 - 484
  • [27] Optical characteristics of electrochemically fabricated porous silicon microcavities
    Kanan, AA
    Ghosh, PK
    NANOSENSING: MATERIALS AND DEVICES, 2004, 5593 : 609 - 617
  • [28] Porous silicon microcavities as optical and electrical chemical sensors
    Mulloni, V.
    Gaburro, Z.
    Pavesi, L.
    Physica Status Solidi (A) Applied Research, 2000, 182 (01): : 479 - 484
  • [29] OPTICAL-PROPERTIES OF SILICON NANOSTRUCTURES
    FU, HX
    LING, Y
    XIDE, X
    PHYSICAL REVIEW B, 1993, 48 (15) : 10978 - 10982
  • [30] OPTICAL-PROPERTIES OF OXYGEN IN SILICON
    RYZHKOVA, EM
    TRAPEZNIKOVA, II
    CHELNOKOV, VE
    YAKOVENKO, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (06): : 628 - 630
12345