ENHANCED OPTICAL-PROPERTIES IN POROUS SILICON MICROCAVITIES

被引：101

作者：

PELLEGRINI, V

TREDICUCCI, A

MAZZOLENI, C

PAVESI, L

机构：

[1] IST NAZL FIS MAT,I-56126 PISA,ITALY

[2] TRENT UNIV,IST NAZL FIS MOLEC,I-38050 TRENT,ITALY

[3] TRENT UNIV,DIPARTIMENTO FIS,I-38050 TRENT,ITALY

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.52.R14328

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the experimental investigation of the optical properties of porous silicon embedded in a planar microcavity structure in which both the active layer and the two Bragg reflectors are fabricated by electrochemical processing of a p-type porous silicon wafer. By tuning the cavity resonance energy around the maximum of the porous silicon emission we have observed photoluminescence linewidths as narrow as 18-25 meV and an intensity enhancement of more than one order of magnitude. The experimental results are clarified by theoretical calculations performed with the standard transfer-matrix approach in the framework of a porous silicon quantum-box model.

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页码：14328 / 14331

页数：4

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