LOCALIZATION IN HIGHLY STRAINED IN0.35GA0.65AS/GAAS ULTRATHIN QUANTUM-WELLS

被引：10

作者：

MARTINEZPASTOR, J

AGULLORUEDA, F

VINATTIERI, A

MESEGUER, F

SANCHEZDEHESA, J

COLOCCI, M

MAYORAL, R

CESCHIN, AM

GRANDJEAN, N

MASSIES, J

机构：

[1] UNIV FLORENCE, DIPARTIMENTO FIS, I-50125 FLORENCE, ITALY

[2] UNIV AUTONOMA MADRID, CSIC, INST CIENCIA MAT, E-28049 MADRID, SPAIN

[3] CNRS, PHYS SOLIDE & ENERGIE SOLAIRE LAB, F-06560 VALBONNE, FRANCE

[4] UNIV AUTONOMA MADRID, FAC CIENCIAS, DIV FIS, E-28049 MADRID, SPAIN

[5] UNIV VALENCIA, DEPT FIS APLICADA, E-46100 BURJASSOT, SPAIN

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1993年 / 14卷 / 01期

关键词：

D O I：

10.1006/spmi.1993.1100

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied different strained InGaAs/GaAs ultrathin quantum wells grown on vicinal surfaces for various terrace lengths and In contents. From photoluminescence experiments we observe an enhancement of the continuum density of states of quantum wells with large In content (x=0.35). We associate this behavior with the localization of carriers in regions of quasi one-dimensional confinement which are induced by fluctuations in the lateral periodicity of the strained layers. This assumption is supported by time resolved measurements as well. © 1993 Academic Press. All rights reserved.

引用

页码：39 / 47

页数：9

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