SPRAY SELECTIVE ETCH PROCESS FOR SHORT-CAVITY FABRICATION OF GAAS/GAALAS SURFACE EMITTING LASER

被引：3
|
作者：
TANOBE, H
TAMANUKI, T
UCHIDA, T
KOYAMA, F
IGA, K
机构：
[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 03期
关键词：
GALLIUM ARSENIDE; SURFACE EMITTING LASERS; SPRAY ETCH; PREFERENTIAL ETCH;
D O I：
10.1143/JJAP.31.949
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have improved the fabrication process forming the short cavity structure for GaAs/GaAlAs vertical cavity surface emitting lasers. A complete flat epitaxial surface for the output side mirror was obtained by selectively removing the GaAs substrate using a spray wet etch. We present some results on surface characterization.
引用
收藏
页码：949 / 950
页数：2
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