EFFECT OF THERMAL-TREATMENT ON RECOMBINATION OF CHARGE-CARRIERS IN POLYCRYSTALLINE PBTE FILMS

被引：0

作者：

MASTEIKA, RB

TUMKYAVICHUS, KK

TOMASHUNAS, RG

PYATRAUSKAS, MB

机构：

来源：

UKRAINSKII FIZICHESKII ZHURNAL | 1992年 / 37卷 / 02期

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D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High-temperature annealing of polycrystalline thin PbTe films has been studied for its effect on photoconductivity spectrum and fast recombination mechanisms. The spectrum measurements show displacements of the photoconductivity red limit with an increase of annealing temperatures and at 575 K it reaches the value of approximately 70 meV. Comparing the results of spectrum and relaxation investigations the Auger recombination involving traps is obtained.

引用

页码：266 / 269

页数：4

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