H-INDUCED SURFACE RESTRUCTURING ON SI(100) - FORMATION OF HIGHER HYDRIDES

H-induced surface structures on Si(100) were studied using temperature-programmed-desorption mass spectroscopy and low-energy electron diffraction. It is shown that the (3 x 1) phase consists of mainly monohydride and dihydride structures, while the (1 x 1) phase is composed of a mixture of monohydride, dihydride, and trihydride surface species. The trihydride surface species is associated with the phase transition between the (3 x 1) and (1 x 1) surface phases, and liberates SiH4 and beta-3-H-2 during thermal desorption, beginning at approximately 200 K. For the fully saturated Si(100) surface, a saturation surface coverage of 1.9 monolayers (ML) H has been established at a Si(100) adsorption temperature of 210 +/- 10 K. These results suggest that the 1.9-ML saturation coverage of H on Si(100) involves the presence of SiH3(a) species, which leads to a (3 x 1) --> (1 x 1) LEED pattern change. This is contrary to a model for the (1 x 1) surface involving a uniform SiH2(a) overlayer.