NATIVE-OXIDE MASKED IMPURITY-INDUCED LAYER DISORDERING OF ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURES

被引：17

作者：

DALLESASSE, JM ^{[1
]}

HOLONYAK, N ^{[1
]}

ELZEIN, N ^{[1
]}

RICHARD, TA ^{[1
]}

KISH, FA ^{[1
]}

SUGG, AR ^{[1
]}

BURNHAM, RD ^{[1
]}

SMITH, SC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 09期

关键词：

D O I：

10.1063/1.104460

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented showing that the native oxide that can be formed on high Al composition Al(x)Ga(1-x)As (x greater-than-or-similar-to 0.7) confining layers on Al(y)Ga(1-y)As-Al(z)Ga(1-z)As (y > z) superlattices or quantum well heterostructures serves as an effective mask against impurity diffusion (Zn or Si), and thus against impurity-induced layer disordering. The high quality native oxide is produced by the conversion of high Al composition Al(x)Ga(1-x)As (x greater-than-or-similar-to 0.7) confining layers, which can be grown on a variety of heterostructures, via H2O vapor oxidation (greater-than-or-similar-to 400-degrees-C) in an N2 carrier gas.

引用

页码：974 / 976

页数：3

共 13 条

[11] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF III-V SEMICONDUCTORS [J].