CARBON-DOPED BASE GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING CARBON-TETRACHLORIDE AS A DOPANT SOURCE

被引:58
作者
CUNNINGHAM, BT
STILLMAN, GE
JACKSON, GS
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] RAYTHEON CO,DIV RES,LEXINGTON,MA 02173
关键词
D O I
10.1063/1.102785
中图分类号
O59 [应用物理学];
学科分类号
摘要
Carbon tetrachloride (CCl4) has been used as a carbon doping source for the base region of a GaAs/AlGaAs Npn heterojunction bipolar transistor (HBT) grown by low-pressure metalorganic chemical vapor deposition (MOCVD). Transistors were fabricated and characterized for dc current gain, emitter-base junction ideality factor, base contact resistance, and external base resistance. Microwave characterization by S-parameter measurement was performed to determine the common emitter current gain and maximum available gain as a function of frequency. Transistors with the base contact area self-aligned to a 3×10 μm emitter finger had a dc current gain as high as 50, an emitter-base junction ideality factor of n=1.2, and a current gain cutoff frequency of ft=26 GHz. Transistors of equal emitter area without self-alignment exhibited dc current gain as high as 86, n=1.2, and ft=20 GHz. A base contact resistance of Rc=2. 85×10-6 Ω cm2 and an external base sheet resistance of Rs=533.4 Ω/D'Alembertian were measured. These preliminary results indicate that carbon doping from CCl4 may be an attractive substitute for Zn or Mg in GaAs/AlGaAs HBT structures grown by MOCVD.
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页码:361 / 363
页数:3
相关论文
共 16 条
[1]   ATOMIC LAYER EPITAXY GROWN HETEROJUNCTION BIPOLAR-TRANSISTOR HAVING A CARBON-DOPED BASE [J].
BHAT, R ;
HAYES, JR ;
COLAS, E ;
ESAGUI, R .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) :442-443
[2]   COLLECTOR-EMITTER OFFSET VOLTAGE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
CHAND, N ;
FISCHER, R ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1985, 47 (03) :313-315
[3]   CARBON DIFFUSION IN UNDOPED, N-TYPE, AND P-TYPE GAAS [J].
CUNNINGHAM, BT ;
GUIDO, LJ ;
BAKER, JE ;
MAJOR, JS ;
HOLONYAK, N ;
STILLMAN, GE .
APPLIED PHYSICS LETTERS, 1989, 55 (07) :687-689
[4]   HEAVY CARBON DOPING OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAAS USING CARBON-TETRACHLORIDE [J].
CUNNINGHAM, BT ;
HAASE, MA ;
MCCOLLUM, MJ ;
BAKER, JE ;
STILLMAN, GE .
APPLIED PHYSICS LETTERS, 1989, 54 (19) :1905-1907
[5]   HIGH-FREQUENCY PERFORMANCE LIMITATIONS OF MILLIMETER-WAVE HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
DAS, MB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) :604-614
[6]   GROWTH AND DIFFUSION OF ABRUPT ZINC PROFILES IN GALLIUM-ARSENIDE AND HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
ENQUIST, P ;
HUTCHBY, JA ;
DELYON, TJ .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4485-4493
[7]   SECONDARY ION MASS-SPECTROSCOPY DEPTH PROFILES OF HETEROJUNCTION BIPOLAR-TRANSISTOR EMITTER BASE HETEROJUNCTIONS GROWN BY LOW-PRESSURE OMVPE [J].
ENQUIST, PM .
JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :637-645
[8]   CARBON-DOPED ALXGA1-XAS-GAAS QUANTUM WELL LASERS [J].
GUIDO, LJ ;
JACKSON, GS ;
HALL, DC ;
PLANO, WE ;
HOLONYAK, N .
APPLIED PHYSICS LETTERS, 1988, 52 (07) :522-524
[9]   HETEROSTRUCTURE BIPOLAR-TRANSISTORS - WHAT SHOULD WE BUILD [J].
KROEMER, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :126-130
[10]   MECHANISM OF CARBON INCORPORATION IN MOCVD GAAS [J].
KUECH, TF ;
VEUHOFF, E .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :148-156