INTERFACIAL REACTIONS OF OFF-STOICHIOMETRIC YBACUO FILMS ON MGO AND SI SUBSTRATES

被引:2
|
作者
TERUYAMA, T [1 ]
ITOH, T [1 ]
TAKAI, H [1 ]
机构
[1] TOKYO DENKI UNIV,CHIYODA KU,TOKYO 101,JAPAN
关键词
D O I
10.1149/1.2086414
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
YBaCuO films were deposited on Si and MgO substrates by RF sputtering in Ar + 02 ambient. Composition in the film is quite different from that of the target. Interfacial reactions between the film and Si or MgO substrates has been investigated by Rutherford backscattering spectroscopy. After the annealing at 800°-900°C, it has been confirmed that Cu atoms diffuse into the substrate. However, by depositing a Cu interfacial layer between YBaCuO film and the substrate, Cu diffusion is suppressed and the stoichiometric superconducting phase of Y:Ba:Cu=l:2:3 is formed. © 1990, The Electrochemical Society, Inc. All rights reserved.
引用
收藏
页码:336 / 339
页数:4
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