CLOSED-FORM ANALYTICAL SOLUTIONS FOR THE BREAKDOWN VOLTAGE OF PLANAR JUNCTIONS TERMINATED WITH A SINGLE FLOATING FIELD RING

被引：19

作者：

BALIGA, BJ

机构：

[1] Electrical and Computer Engineering Department, North Carolina State University, Raleigh

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 05期

关键词：

Electric Breakdown;

D O I：

10.1016/0038-1101(90)90231-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Analytical solutions for the breakdown voltage of cylindrical junctions terminated with a single, optimally placed, floating field ring are presented. These solutions are provided in a normalized form which allows calculation of the breakdown voltage over a broad range of junction depths and background dopings. In addition, an equation for the optimal spacing of the field ring has been derived. This allows determination of the optimal spacing for the first time without resorting to numerical analysis for each specific case. © 1990.

引用

页码：485 / 488

页数：4

共 5 条

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ADLER, MS ;

TEMPLE, VAK ;

FERRO, AP ;

RUSTAY, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :107-113

[2]

BALIGA BJ, 1976, SOLID STATE ELECTRON, V19, P739, DOI 10.1016/0038-1101(76)90152-0

[3]

BALIGA BJ, 1987, MODERN POWER DEVICES

[4]

Ghandhi SK, 1977, SEMICONDUCTOR POWER

[5] HIGH-VOLTAGE PLANAR P-N JUNCTIONS [J].

KAO, YC ;

WOLLEY, ED .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1409-+

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