A SELF-ALIGNED COSI2 INTERCONNECTION AND CONTACT TECHNOLOGY FOR VLSI APPLICATIONS

被引：71

作者：

VANDENHOVE, L

WOLTERS, R

MAEX, K

DEKEERSMAECKER, RF

DECLERCK, GJ

机构：

[1] CATHOLIC UNIV LEUVEN,ESAT LAB,B-3030 HEVERLE,BELGIUM

[2] PHILIPS RES LABS,SCI STAFF,5600 JA EINDHOVEN,NETHERLANDS

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 03期

关键词：

D O I：

10.1109/T-ED.1987.22963

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：554 / 561

页数：8

共 17 条

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[7]

LUCCHESE CJ, 1982, P ELECTROCHEM SOC M, V827, P232

[8]

Maex K., 1986, Proceedings of the Fifth International Symposium on Silicon Materials Science and Technology: Semiconductor Silicon 1986, P346

[9] AN IMPROVED TEST STRUCTURE AND KELVIN-MEASUREMENT METHOD FOR THE DETERMINATION OF INTEGRATED-CIRCUIT FRONT CONTACT RESISTANCE [J].

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[10]

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