A MESFET VARIABLE-CAPACITANCE MODEL FOR GAAS INTEGRATED-CIRCUIT SIMULATION

被引：82
作者：
TAKADA, T
YOKOYAMA, K
IDA, M
SUDO, T
机构：
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1982年 / 30卷 / 05期
关键词：
D O I：
10.1109/TMTT.1982.1131127
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：719 / 724
页数：6
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