MICROSTRUCTURAL OBSERVATIONS ON GALLIUM NITRIDE LIGHT-EMITTING DIODES

被引:19
作者
MARUSKA, HP [1 ]
ANDERSON, LJ [1 ]
STEVENSON, DA [1 ]
机构
[1] STANFORD UNIV, DEPT MAT SCI, STANFORD, CA 94305 USA
关键词
D O I
10.1149/1.2402013
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1202 / 1207
页数:6
相关论文
共 11 条
[1]   GALLIUM NITRIDE FORMED BY VAPOUR DEPOSITION AND BY CONVERSION FROM GALLIUM ARSENIDE [J].
FAULKNER, KR ;
WICKENDEN, DK ;
ISHERWOOD, BJ ;
RICHARDS, BP ;
SCOBEY, IH .
JOURNAL OF MATERIALS SCIENCE, 1970, 5 (04) :308-+
[2]   ELECTRICAL PROPERTIES OF NORMAL TYPE VAPOR-GROWN GALLIUM NITRIDE [J].
ILEGEMS, M ;
MONTGOME.HC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (05) :885-895
[3]   DIRECT MEASUREMENT OF DEPLETION LAYER WIDTH VARIATION VS APPLIED BIAS FOR A P-N JUNCTION (SCANNING ELECTRON MICROSCOPY MOS DEVICES SI-AL E) [J].
MACDONALD, NC ;
EVERHART, TE .
APPLIED PHYSICS LETTERS, 1965, 7 (10) :267-+
[4]   VIOLET LUMINESCENCE OF MG-DOPED GAN [J].
MARUSKA, HP ;
STEVENSON, DA ;
PANKOVE, JI .
APPLIED PHYSICS LETTERS, 1973, 22 (06) :303-305
[5]   PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J].
MARUSKA, HP ;
TIETJEN, JJ .
APPLIED PHYSICS LETTERS, 1969, 15 (10) :327-&
[6]   PREPARATION OF MG-DOPED GAN DIODES EXHIBITING VIOLET ELECTROLUMINESCENCE [J].
MARUSKA, HP ;
STEVENSON, DA ;
RHINES, WC .
MATERIALS RESEARCH BULLETIN, 1972, 7 (08) :777-+
[7]  
Pankove J. I., 1973, Journal of Luminescence, V6, P54, DOI 10.1016/0022-2313(73)90094-X
[8]  
Pankove J. I., 1971, Journal of Luminescence, V4, P63, DOI 10.1016/0022-2313(71)90009-3
[9]  
Pankove J.I., 1972, J LUMIN, V5, P84, DOI DOI 10.1016/0022-2313(72)90038-5
[10]  
PANKOVE JI, 1971, RCA REV, V32, P383