MICROSTRUCTURAL OBSERVATIONS ON GALLIUM NITRIDE LIGHT-EMITTING DIODES

被引：19

作者：

MARUSKA, HP ^{[1
]}

ANDERSON, LJ ^{[1
]}

STEVENSON, DA ^{[1
]}

机构：

[1] STANFORD UNIV, DEPT MAT SCI, STANFORD, CA 94305 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 09期

关键词：

D O I：

10.1149/1.2402013

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1202 / 1207

页数：6

共 11 条

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ISHERWOOD, BJ ;

RICHARDS, BP ;

SCOBEY, IH .

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[2] ELECTRICAL PROPERTIES OF NORMAL TYPE VAPOR-GROWN GALLIUM NITRIDE [J].

ILEGEMS, M ;

MONTGOME.HC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (05) :885-895

[3] DIRECT MEASUREMENT OF DEPLETION LAYER WIDTH VARIATION VS APPLIED BIAS FOR A P-N JUNCTION (SCANNING ELECTRON MICROSCOPY MOS DEVICES SI-AL E) [J].

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EVERHART, TE .

APPLIED PHYSICS LETTERS, 1965, 7 (10) :267-+

[4] VIOLET LUMINESCENCE OF MG-DOPED GAN [J].

MARUSKA, HP ;

STEVENSON, DA ;

PANKOVE, JI .

APPLIED PHYSICS LETTERS, 1973, 22 (06) :303-305

[5] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J].

MARUSKA, HP ;

TIETJEN, JJ .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :327-&

[6] PREPARATION OF MG-DOPED GAN DIODES EXHIBITING VIOLET ELECTROLUMINESCENCE [J].

MARUSKA, HP ;

STEVENSON, DA ;

RHINES, WC .

MATERIALS RESEARCH BULLETIN, 1972, 7 (08) :777-+

[7]

Pankove J. I., 1973, Journal of Luminescence, V6, P54, DOI 10.1016/0022-2313(73)90094-X

[8]

Pankove J. I., 1971, Journal of Luminescence, V4, P63, DOI 10.1016/0022-2313(71)90009-3

[9]

Pankove J.I., 1972, J LUMIN, V5, P84, DOI DOI 10.1016/0022-2313(72)90038-5

[10]

PANKOVE JI, 1971, RCA REV, V32, P383

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