ON THE OCCURRENCE OF PHASE-SEPARATION IN INGAAS/INP SYSTEMS

被引：0

作者：

PEIRO, F ^{[1
]}

CORNET, A ^{[1
]}

MORANTE, JR ^{[1
]}

机构：

[1] UNIV BARCELONA,SERV CIENT TECN,E-08028 BARCELONA,SPAIN

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 | 1993年 / 134期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work presents the evolution of the fine contrast modulation observed in the InxGa1-xAs/InP system, with the layer mismatch, layer thickness and growth temperature. The results show that the fine structure appears during the growth and has a dynamic behaviour as growth proceeds. Some results about the coarse modulation are also commented on.

引用

页码：291 / 294

页数：4

共 8 条

[1]

GLAS F, 1989, NATO ADV SCI I B-PHY, V203, P217

[2] CRYSTALLINE MICROSTRUCTURE OF III-V-QUATERNARY ALLOY SEMICONDUCTORS [J].