EFFECTS OF OXYGEN PARTIAL PRESSURE ON THE OXIDATION OF SILICON CARBIDE

被引：40

作者：

JORGENSEN, PJ

WADSWORTH, ME

CUTLER, IB

机构：

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1960年 / 43卷 / 04期

关键词：

D O I：

10.1111/j.1151-2916.1960.tb12983.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：209 / 212

页数：4

共 20 条

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[9] OXIDATION OF SILICON CARBIDE [J].

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