NON-LINEAR ELECTRICAL EFFECTS IN EPITAXIAL GRADED-GAP CDXHG1-XTE LAYERS

被引：2
|
作者：
SZATKOWSKI, J
KACZMARSKI, K
KOCHAN, B
SIERANSKI, K
PAWLIKOWSKI, JM
机构：
来源：
THIN SOLID FILMS | 1980年 / 70卷 / 01期
关键词：
D O I：
10.1016/0040-6090(80)90411-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：49 / 55
页数：7
相关论文
共 50 条
  • [21] LOCAL NONDESTRUCTIVE TESTING OF THE PARAMETERS OF PLATES AND EPITAXIAL LAYERS OF CDXHG1-XTE
    SHALYGIN, VA
    SHTURBIN, AV
    ANTYUSHIN, VS
    RUSSIAN JOURNAL OF NONDESTRUCTIVE TESTING, 1993, 29 (10) : 781 - 792
  • [22] Study of the effect of graded gap epilayers on the performance of CdxHg1-xTe photodiodes
    Vasil'ev, VV
    Esaev, DG
    Kravchenko, AF
    Osadchii, VM
    Suslyakov, AO
    SEMICONDUCTORS, 2000, 34 (07) : 844 - 847
  • [23] THE USE OF HELIUM ION RBS FOR PROFILING EPITAXIAL LAYERS OF CDXHG1-XTE
    AVERY, AJ
    DISKETT, DJ
    LANE, DW
    GIESS, J
    IRVINE, SJC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 45 (1-4): : 181 - 185
  • [24] X-RAY TOPOGRAPHY AND DIFFRACTOMETRY OF CDXHG1-XTE EPITAXIAL LAYERS
    BROWN, GT
    KEIR, AM
    GIESS, J
    GOUGH, JS
    IRVINE, SJC
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 457 - 465
  • [25] ANALYSIS OF EPITAXIAL CDXHG1-XTE LAYERS USING RBS, SIMS AND EER
    DISKETT, DJ
    AVERY, AJ
    BLACKMORE, G
    IRVINE, SJC
    GIESS, J
    BERLOUIS, LEA
    SURFACE AND INTERFACE ANALYSIS, 1989, 14 (11) : 717 - 724
  • [26] X-RAY TOPOGRAPHY AND DIFFRACTOMETRY OF CDXHG1-XTE EPITAXIAL LAYERS
    BROWN, GT
    KEIR, AM
    GIESS, J
    GOUGH, JS
    IRVINE, SJC
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 457 - 465
  • [27] AN RBS AND CHANNELING STUDY OF EPITAXIAL LAYERS OF CDXHG1-XTE GROWN ON GAAS
    AVERY, AJ
    DISKETT, DJ
    GIESS, J
    IRVINE, SJC
    JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 56 - 60
  • [28] EFFECTS OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF CDXHG1-XTE
    JONES, CL
    QUELCH, MJT
    CAPPER, P
    GOSNEY, JJ
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 9080 - 9092
  • [29] Study of the electrical properties of CdxHg1-xTe
    Biryulin, PV
    Kosheleva, VI
    Turinov, VI
    SEMICONDUCTORS, 2004, 38 (07) : 751 - 757
  • [30] DIFFUSION OF INDIUM IN EPITAXIAL CDXHG1-XTE FILMS
    MIRONOV, KE
    MYNBAEV, KD
    IVANOVOMSKII, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (03): : 368 - 370
12345