GROWTH OF PERIODIC STRUCTURES BY MOLECULAR-BEAM METHOD

被引：116
作者：
CHO, AY
机构：
来源：
APPLIED PHYSICS LETTERS | 1971年 / 19卷 / 11期
关键词：
D O I：
10.1063/1.1653775
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：467 / &
相关论文
共 8 条
[1]  
BLAKESLEE AE, 1971, 3 P INT S GALL ARS R, P283
[2]   GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2074-&
[3]   EPITAXY OF SILICON DOPED GALLIUM ARSENIDE BY MOLECULAR BEAM METHOD [J].
CHO, AY ;
HAYASHI, I .
METALLURGICAL TRANSACTIONS, 1971, 2 (03) :777-&
[4]   MOLECULAR BEAM EPITAXY AND OPTICAL EVALUATION OF A1XGA1-XAS [J].
CHO, AY ;
STOKOWSK, SE .
SOLID STATE COMMUNICATIONS, 1971, 9 (09) :565-&
[5]  
CHO AY, 1971, 3RD P INT S GAAS, P18
[6]  
CHO AY, 1971, J APPL PHYS, V42, P4542
[7]   SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].
ESAKI, L ;
TSU, R .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&
[8]  
GIESECKE G, 1966, SEMICONDUCT SEMIMET, V2, P73
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