STOICHIOMETRY-BASED DESCRIPTION OF SILICIDE-SILICON SCHOTTKY BARRIERS

被引：0
作者：
FREEOUF, JL [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1980年 / 25卷 / 03期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：266 / 266
页数：1
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