STOICHIOMETRY-BASED DESCRIPTION OF SILICIDE-SILICON SCHOTTKY BARRIERS

被引：0
|
作者：
FREEOUF, JL [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1980年 / 25卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：266 / 266
页数：1
相关论文
共 50 条
  • [31] METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS
    KIRCHER, CJ
    SOLID-STATE ELECTRONICS, 1971, 14 (06) : 507 - +
  • [32] Enhanced Thermoelectric Properties of Cobalt Silicide-Silicon Heterostructured Nanowires
    Lee, Seungho
    Cho, Hyeonsu
    Yoon, Sol
    Seo, Myunghae
    Yoo, Hyeongseok
    Kong, Byoung Don
    Meyyappan, M.
    Baek, Chang-Ki
    IEEE Transactions on Nanotechnology, 2021, 20 : 54 - 60
  • [33] Enhanced Thermoelectric Properties of Cobalt Silicide-Silicon Heterostructured Nanowires
    Lee, Seungho
    Cho, Hyeonsu
    Yoon, Sol
    Seo, Myunghae
    Yoo, Hyeongseok
    Kong, Byoung Don
    Meyyappan, M.
    Baek, Chang-Ki
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2021, 20 : 54 - 60
  • [34] Silicon-platinum silicide schottky barriers with a highly-doped surface layer
    Voitsekhovskii A.V.
    Kokhanenko A.P.
    Nesmelov S.N.
    Lyapunov S.I.
    Komarov N.V.
    Russian Physics Journal, 2001, 44 (8) : 794 - 805
  • [35] SCHOTTKY BARRIERS AT EPITAXIAL SILICIDE/SI INTERFACES
    FUJITANI, H
    ASANO, S
    APPLIED SURFACE SCIENCE, 1992, 56-8 : 408 - 415
  • [36] Atomic-configuration-dependent energy at epitaxial silicide-silicon interfaces
    Kikuchi, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (02): : 653 - 656
  • [37] SEMICONDUCTING SILICIDE-SILICON HETEROJUNCTION ELABORATION BY SOLID-PHASE EPITAXY
    CHERIEF, N
    DANTERROCHES, C
    CINTI, RC
    TAN, TAN
    DERRIEN, J
    APPLIED PHYSICS LETTERS, 1989, 55 (16) : 1671 - 1673
  • [38] A model for specific contact resistance applicable for titanium silicide-silicon contacts
    Varahramyan, K
    Verret, EJ
    SOLID-STATE ELECTRONICS, 1996, 39 (11) : 1601 - 1607
  • [39] TITANIUM SILICIDE-SILICON INTERFACE DEGRADATION DURING HEAT-TREATMENT
    DELANEROLLE, N
    KIM, B
    MOSER, L
    ZHENG, Y
    STERNER, D
    BERG, J
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (11) : 1185 - 1192
  • [40] Atomic-configuration-dependent energy at epitaxial silicide-silicon interfaces
    Kikuchi, Akira
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (02): : 653 - 656
12345