ACTIVATION ENERGIES IN CHEMICAL ETCHING OF SEMICONDUCTORS IN HNO3-HF-CH3COOH

被引：24

作者：

BOGENSCHUTZ, AF

KRUSEMARK, W

LOCHERER, KH

MUSSINGER, W

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1967年 / 114卷 / 09期

关键词：

D O I：

10.1149/1.2426794

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：970 / +

页数：1

共 13 条

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[9]

ILSCHNER B, 1966, Z METALLKD, V57, P194

[10] CONTROLLED ETCHING OF SILICON IN THE HF-HNO3 SYSTEM [J].

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