INGAAS-INP SEPARATED ABSORPTION AND MULTIPLICATION REGIONS AVALANCHE PHOTO-DIODE USING LIQUID-PHASE AND VAPOR-PHASE EPITAXIES

被引：32
作者：
ANDO, H
YAMAUCHI, Y
NAKAGOME, H
SUSA, N
KANBE, H
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 02期
关键词：
D O I：
10.1109/JQE.1981.1071070
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：250 / 254
页数：5
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