VAPOR-PHASE GROWTH OF ZIRCONIUM NITRIDE WHISKER ON VARIOUS SUBSTRATES

被引：2

作者：

MIYOSHI, M

TAMARI, N

KATO, A

机构：

[1] Department of Applied Chemistry, Faculty of Engineering, Kyushu University, Hakozaki, Higashi-ku

来源：

NIPPON KAGAKU KAISHI | 1979年 / 12期

关键词：

D O I：

10.1246/nikkashi.1979.1771

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

ZrN whiskers are grown on various substrates. It is found that Ni, SiO2 and muljite SUDS-trates are effective in whisker density and in growth rate for the growth from a ZrCl4-H2-N3 system. The presence of Si-carrying species in a vapor phase also accelerates the nucleation of whiskers. ZrN whiskers grow at the temperature range of 1000~1300°C and in the direction of <100> and <111>. © 1979, The Chemical Society of Japan. All rights reserved.

引用

页码：1771 / 1773

页数：3