OPTIMUM SCALING OF BURIED-CHANNEL CCDS

被引：4
作者：
CHATTERJEE, PK
TAYLOR, GW
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 03期
关键词：
D O I：
10.1109/T-ED.1980.19898
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：553 / 562
页数：10
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