GROWTH AND CHARACTERIZATION OF METAL-SEMICONDUCTOR SUPERLATTICES

[1] HIGH-TEMPERATURE NUCLEATION AND SILICIDE FORMATION AT THE CO/SI(111)-7X7 INTERFACE - A STRUCTURAL INVESTIGATION [J]. PHYSICAL REVIEW B, 1986, 34 (02): : 913 - 920

[2] SILICON OVERGROWTH ON COSI2/SI(111) EPITAXIAL STRUCTURES - APPLICATION TO PERMEABLE BASE TRANSISTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 463 - 469

[3] KINETICS OF FORMATION AND PROPERTIES OF EPITAXIAL COSI2 FILMS ON SI (111) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 770 - 773

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI ON COSI2 SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1200 - 1202

[5] GROWTH OF EPITAXIAL ULTRATHIN CONTINUOUS COSI2 LAYERS ON SI(111) [J]. SURFACE SCIENCE, 1987, 189 : 1055 - 1061

[6] ON THE GROWTH OF COSI2 AND COSI/SI HETEROSTRUCTURES ON SI(111) [J]. SOLID STATE COMMUNICATIONS, 1987, 63 (06) : 445 - 449

[7] HUNT BD, 1986, MATER RES SOC S P, V56, P151

[8] UNIFORMITY AND CRYSTALLINE QUALITY OF COSI2/SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY AND REACTIVE DEPOSITION EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 596 - 599

[9] ROOM-TEMPERATURE CODEPOSITION GROWTH TECHNIQUE FOR PINHOLE REDUCTION IN EPITAXIAL COSI2 ON SI (111) [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 804 - 806

[10] SURFACE-STRUCTURE OF EPITAXIAL COSI2 CRYSTALS GROWN ON SI(111) [J]. PHYSICAL REVIEW B, 1986, 33 (06): : 4108 - 4113

[1] HIGH-TEMPERATURE NUCLEATION AND SILICIDE FORMATION AT THE CO/SI(111)-7X7 INTERFACE - A STRUCTURAL INVESTIGATION [J]. PHYSICAL REVIEW B, 1986, 34 (02): : 913 - 920

[2] SILICON OVERGROWTH ON COSI2/SI(111) EPITAXIAL STRUCTURES - APPLICATION TO PERMEABLE BASE TRANSISTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 463 - 469

[3] KINETICS OF FORMATION AND PROPERTIES OF EPITAXIAL COSI2 FILMS ON SI (111) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 770 - 773

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI ON COSI2 SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1200 - 1202

[5] GROWTH OF EPITAXIAL ULTRATHIN CONTINUOUS COSI2 LAYERS ON SI(111) [J]. SURFACE SCIENCE, 1987, 189 : 1055 - 1061

[6] ON THE GROWTH OF COSI2 AND COSI/SI HETEROSTRUCTURES ON SI(111) [J]. SOLID STATE COMMUNICATIONS, 1987, 63 (06) : 445 - 449

[7] HUNT BD, 1986, MATER RES SOC S P, V56, P151

[8] UNIFORMITY AND CRYSTALLINE QUALITY OF COSI2/SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY AND REACTIVE DEPOSITION EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 596 - 599

[9] ROOM-TEMPERATURE CODEPOSITION GROWTH TECHNIQUE FOR PINHOLE REDUCTION IN EPITAXIAL COSI2 ON SI (111) [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 804 - 806

[10] SURFACE-STRUCTURE OF EPITAXIAL COSI2 CRYSTALS GROWN ON SI(111) [J]. PHYSICAL REVIEW B, 1986, 33 (06): : 4108 - 4113