CONDUCTION-BAND OFFSET IN STRAINED AL0.15GA0.85AS/IN0.15GA0.85AS/GAAS PSEUDOMORPHIC STRUCTURES

被引：14

作者：

LIN, SY ^{[1
]}

TSUI, DC ^{[1
]}

LEE, H ^{[1
]}

ACKLEY, D ^{[1
]}

机构：

[1] SIEMENS RES & TECHNOL,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 21期

关键词：

D O I：

10.1063/1.102063

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2211 / 2213

页数：3

共 22 条

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