EFFECT OF PRIMARY IONIZATION IN AMORPHOUS-SILICON DETECTORS

被引:17
作者
EQUER, B [1 ]
KARAR, A [1 ]
机构
[1] COLL FRANCE,INST NATL PHYS NUCL & PHYS PARTICULES,CNRS,PHYS CORPUSCULAIRE LAB,F-75231 PARIS 05,FRANCE
关键词
D O I
10.1016/0168-9002(88)90324-5
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:574 / 584
页数:11
相关论文
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