THEORY OF THE CHEMICAL-SHIFT AT RELAXED (110) SURFACES OF III-V SEMICONDUCTOR COMPOUNDS

被引:56
作者
PRIESTER, C
ALLAN, G
LANNOO, M
机构
关键词
D O I
10.1103/PhysRevLett.58.1989
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1989 / 1991
页数:3
相关论文
共 15 条
[1]  
BAIER HU, IN PRESS
[2]   CORE-LEVEL BINDING-ENERGY SHIFTS DUE TO RECONSTRUCTION ON THE SI(111) 2X1 SURFACE [J].
BRENNAN, S ;
STOHR, J ;
JAEGER, R ;
ROWE, JE .
PHYSICAL REVIEW LETTERS, 1980, 45 (17) :1414-1418
[3]  
EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[4]   EFFECTIVE TWO-DIMENSIONAL HAMILTONIAN AT SURFACES [J].
GUINEA, F ;
TEJEDOR, C ;
FLORES, F ;
LOUIS, E .
PHYSICAL REVIEW B, 1983, 28 (08) :4397-4402
[5]   SCHOTTKY-BARRIER FORMATION .1. ABRUPT METAL-SEMICONDUCTOR JUNCTIONS [J].
GUINEA, F ;
SANCHEZDEHESA, J ;
FLORES, F .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (33) :6499-6512
[6]   BOND-ORBITAL MODEL AND PROPERTIES OF TETRAHEDRALLY COORDINATED SOLIDS [J].
HARRISON, WA .
PHYSICAL REVIEW B, 1973, 8 (10) :4487-4498
[7]  
HARRISON WA, 1977, FESTKORPERPROBLEME, V17
[8]   GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES [J].
HIMPSEL, FJ ;
HEIMANN, P ;
CHIANG, TC ;
EASTMAN, DE .
PHYSICAL REVIEW LETTERS, 1980, 45 (13) :1112-1115
[10]   SIMPLE TIGHT-BINDING CALCULATION OF TRANSVERSE EFFECTIVE CHARGES IN III-V, II-VI, AND IV-IV COMPOUND SEMICONDUCTORS [J].
LANNOO, M ;
DECARPIGNY, JN .
PHYSICAL REVIEW B, 1973, 8 (12) :5704-5710