IMPACT IONIZATION THEORY FOR TRAPS IN SEMICONDUCTORS

被引：8

作者：

COHEN, ME

LANDSBERG, PT

机构：

[1] CALIF STATE UNIV, DEPT MATH, FRESNO, CA USA

[2] UNIV SOUTHAMPTON, DEPT MATH, SOUTHAMPTON, ENGLAND

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1974年 / 64卷 / 01期

关键词：

D O I：

10.1002/pssb.2220640105

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：39 / 48

页数：10

共 10 条

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[3] EFFECT OF COMPENSATION ON BREAKDOWN FIELDS IN HOMOGENEOUS SEMICONDUCTORS [J].

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LANDSBERG, PT .

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[4]

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[5]

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[6] DETAILED BALANCE BETWEEN AUGER RECOMBINATION AND IMPACT IONIZATION IN SEMICONDUCTORS [J].

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[7] AUGER RECOMBINATION + IMPACT IONIZATION INVOLVING TRAPS IN SEMICONDUCTORS [J].

LANDSBERG, PT ;

LAL, P ;

RHYSROBERTS, C .

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[8] FIELD-DEPENDENCE OF CAPTURE AND RE-EMISSION OF CHARGE-CARRIERS BY SHALLOW LEVELS IN GERMANIUM AND SILICON [J].

MARTINI, M ;

MCMATH, TA .

SOLID-STATE ELECTRONICS, 1973, 16 (02) :129-&

[9] ON PHYSICS OF AVALANCHE BREAKDOWN IN SEMICONDUCTORS [J].

MONCH, W .

PHYSICA STATUS SOLIDI, 1969, 36 (01) :9-+

[10] MAGNETIC FREEZEOUT AND IMPACT IONIZATION IN GAAS [J].

POEHLER, TO .

PHYSICAL REVIEW B, 1971, 4 (04) :1223-&

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