DETAILED BALANCE LIMIT OF EFFICIENCY OF P-N JUNCTION SOLAR CELLS

[1] [Anonymous], 1955, J APPL PHYS, DOI [10.1063/1.1722034, DOI 10.1063/1.1722034]

[2] ELECTRICAL PROPERTIES OF GOLD-DOPED DIFFUSED SILICON COMPUTER DIODES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 87 - 104

[3] BEATTIE AR, 1958, P ROY SOC LONDON, VA249, P16

[4] POSSIBLE MECHANISM FOR RADIATIONLESS RECOMBINATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 105 (05): : 1469 - 1475

[5] BOEHM KH, 1957, Z ASTROPHYSIK, V43, P95

[6] A NEW SILICON P-N JUNCTION PHOTOCELL FOR CONVERTING SOLAR RADIATION INTO ELECTRICAL POWER [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (05) : 676 - 677

[7] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1957, 106 (03): : 418 - 426

[8] EHRENREICH H, IRGERL

[9] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824

[10] GOETZBERGER A, 1959, B AM PHYS SOC, V4, P409

[1] [Anonymous], 1955, J APPL PHYS, DOI [10.1063/1.1722034, DOI 10.1063/1.1722034]

[2] ELECTRICAL PROPERTIES OF GOLD-DOPED DIFFUSED SILICON COMPUTER DIODES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 87 - 104

[3] BEATTIE AR, 1958, P ROY SOC LONDON, VA249, P16

[4] POSSIBLE MECHANISM FOR RADIATIONLESS RECOMBINATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 105 (05): : 1469 - 1475

[5] BOEHM KH, 1957, Z ASTROPHYSIK, V43, P95

[6] A NEW SILICON P-N JUNCTION PHOTOCELL FOR CONVERTING SOLAR RADIATION INTO ELECTRICAL POWER [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (05) : 676 - 677

[7] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1957, 106 (03): : 418 - 426

[8] EHRENREICH H, IRGERL

[9] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824

[10] GOETZBERGER A, 1959, B AM PHYS SOC, V4, P409