NANOSTRUCTURE FABRICATION IN INP AND RELATED-COMPOUNDS

被引：39

作者：

ADESIDA, I

NUMMILA, K

ANDIDEH, E

HUGHES, J

CANEAU, C

BHAT, R

HOLMSTROM, R

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

[2] BELL COMMUN RES INC,RED BANK,NJ 07701

[3] GTE LABS INC,WALTHAM,MA 02254

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 06期

关键词：

D O I：

10.1116/1.585077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanometer-scale gratings have been fabricated in InP and InGaAs/InP heterostructures using electron-beam lithography and reactive-ion etching in methane-hydrogen plasmas. It is shown that the slight overcut obtained in the etch profiles during a single-step etch in CH4/H-2 is due to polymer formation on inert mask surfaces and edges. Intermittent removal of the deposited polymer film is shown to be effective in obtaining anisotropic profiles. Highly anisotropic 35-nm-wide InP lines at 70-nm pitch demonstrate the potential of this fabrication process. The formation of 100-nm-wide free-standing InP wires is also presented.

引用

页码：1357 / 1360

页数：4

共 22 条

[1]

ADESIDA I, 1989, I PHYS C SER, V96, P425

[2] SHORT-PERIOD GRATINGS FOR LONG-WAVELENGTH OPTICAL-DEVICES [J].

ANDIDEH, E ;

ADESIDA, I ;

BROCK, T ;

CANEAU, C ;

KERAMIDAS, V .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1841-1845

[3]

ANDIDEH E, 1990, THESIS U ILLINOIS

[4] REACTIVE ION ETCHING OF GAAS USING A MIXTURE OF METHANE AND HYDROGEN [J].

CHEUNG, R ;

THOMS, S ;

BEAMONT, SP ;

DOUGHTY, G ;

LAW, V ;

WILKINSON, CDW .

ELECTRONICS LETTERS, 1987, 23 (16) :857-859

[5] NOVEL INTERFERENCE EFFECTS BETWEEN PARALLEL QUANTUM WELLS [J].

DATTA, S ;

MELLOCH, MR ;

BANDYOPADHYAY, S ;

NOREN, R ;

VAZIRI, M ;

MILLER, M ;

REIFENBERGER, R .

PHYSICAL REVIEW LETTERS, 1985, 55 (21) :2344-2347

[6]

Furuya K., 1988, Transactions of the Institute of Electronics, Information and Communication Engineers E, VE71, P286

[7]

Hasko D. G., 1989, Microelectronic Engineering, V9, P337, DOI 10.1016/0167-9317(89)90073-7

[8] REACTIVE ION ETCHING OF INP USING CH4/H2 MIXTURES - MECHANISMS OF ETCHING AND ANISOTROPY [J].

HAYES, TR ;

DREISBACH, MA ;

THOMAS, PM ;

DAUTREMONTSMITH, WC ;

HEIMBROOK, LA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (05) :1130-1140

[9] EPITAXIAL-GROWTH ON INP SUBSTRATES ETCHED WITH METHANE REACTIVE ION ETCHING TECHNIQUE [J].

HENRY, L ;

VAUDRY, C ;

LECORRE, A ;

LECROSNIER, D ;

ALNOT, P ;

OLIVIER, J .

ELECTRONICS LETTERS, 1989, 25 (18) :1257-1259

[10] VERY FINE CORRUGATIONS FORMED ON INP BY WET CHEMICAL ETCHING AND ELECTRON-BEAM LITHOGRAPHY [J].

INAMURA, E ;

TAMURA, S ;

MIYAMOTO, Y ;

FURUYA, K ;

SUEMATSU, Y .

ELECTRONICS LETTERS, 1989, 25 (03) :238-240

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