NANOSTRUCTURE FABRICATION IN INP AND RELATED-COMPOUNDS

被引：39
作者：
ADESIDA, I
NUMMILA, K
ANDIDEH, E
HUGHES, J
CANEAU, C
BHAT, R
HOLMSTROM, R
机构：
[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801
[2] BELL COMMUN RES INC,RED BANK,NJ 07701
[3] GTE LABS INC,WALTHAM,MA 02254
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 06期
关键词：
D O I：
10.1116/1.585077
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nanometer-scale gratings have been fabricated in InP and InGaAs/InP heterostructures using electron-beam lithography and reactive-ion etching in methane-hydrogen plasmas. It is shown that the slight overcut obtained in the etch profiles during a single-step etch in CH4/H-2 is due to polymer formation on inert mask surfaces and edges. Intermittent removal of the deposited polymer film is shown to be effective in obtaining anisotropic profiles. Highly anisotropic 35-nm-wide InP lines at 70-nm pitch demonstrate the potential of this fabrication process. The formation of 100-nm-wide free-standing InP wires is also presented.
引用
收藏
页码：1357 / 1360
页数：4
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