OPTICAL-DETECTION OF MICROWAVE-INDUCED IMPACT IONIZATION OF BOUND EXCITONS IN SILICON

被引：43
作者：
WEMAN, H
GODLEWSKI, M
MONEMAR, B
机构：
来源：
PHYSICAL REVIEW B | 1988年 / 38卷 / 17期
关键词：
D O I：
10.1103/PhysRevB.38.12525
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：12525 / 12530
页数：6
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