UNIFORM-FIELD MODEL OF A-SI-H PIN SOLAR-CELLS

被引：0
作者：
KUSIAN, W
PFLEIDERER, H
机构：
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 166卷
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D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The assumption of a uniform field through the i-layer absorber of an a-Si:H pin solar cell seems to be hardly realistic. The analytical models based on this assumption have been nevertheless rather successful. A few calculations will demonstrate this. in connection with suitable experiments the roles of bulk and surface recombination become distinguishable. Spectral response measurements in particular reveal a strong influence of surface recombination, while the reverse dark currents stem from bulk recombination.
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页码：713 / 716
页数：4
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