LOW-TEMPERATURE MIGRATION OF SILICON IN METAL-FILMS ON SILICON SUBSTRATES STUDIED BY BACKSCATTERING TECHNIQUES

被引：24

作者：

HIRAKI, A

LUGUJJO, E

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1972年 / 9卷 / 01期

关键词：

D O I：

10.1116/1.1316540

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：155 / &

共 9 条

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[3] LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM
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NICOLET, MA
MAYER, JW
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[4] EFFECT OF CRYSTAL ORIENTATION ON OXIDATION RATES OF SILICON IN HIGH PRESSURE STEAM
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[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1961, 65 (11) : 2011 - &
[5] Mayer J. W., 1970, ION IMPLANTATION SEM
[6] MCCALDIN JO, TO BE PUBLISHED
[7] ANALYSIS OF AMORPHOUS LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
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MAYER, JW
[J]. SURFACE SCIENCE, 1970, 22 (02) : 263 - &
[8] Turos A., 1968, Nukleonika, V13, P975
[9] TUROS A, 1969, NUKLEONIKA, V14, P319