EFFECT OF HYDROGEN ON SURFACE ROUGHENING DURING SI HOMOEPITAXIAL GROWTH

被引：57

作者：

ADAMS, DP ^{[1
]}

YALISOVE, SM ^{[1
]}

EAGLESHAM, DJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 26期

关键词：

D O I：

10.1063/1.110100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogen is shown to have a strong influence on the evolution of surface morphology during low temperature (310-degrees-C) Si(100) homoepitaxy. Molecular beam epitaxy growth in the presence of deuterium shows a surface roughness within the epitaxial film that increases rapidly until the Si film exhibits a crystalline to amorphous transition. The rate at which the surface roughens depends critically on the partial pressure of deuterium. Although the kinetics of growth are sensitive to small pressures (4 X 10(-8) Torr) of D, it appears that the breakdown of epitaxy does not result from a ''critical'' D concentration at the surface. This work suggests that the crystalline to amorphous transition, instead, results from increased roughening during epitaxy.

引用

页码：3571 / 3573

页数：3

共 19 条

[1]

ADAMS DP, IN PRESS MATER RES S

[2]

APPELBAUM JA, 1980, TOP CURR PHYS, V19, P43

[3] A RHEED STUDY OF EPITAXIAL-GROWTH OF IRON ON A SILICON SURFACE - EXPERIMENTAL-EVIDENCE FOR KINETIC ROUGHENING [J].