THE DOPANT AND COMPOUND FORMING BEHAVIOR OF AS AND AU IMPURITIES IN GA2TE3

被引：13
作者：
WUYTS, K
WATTE, J
LANGOUCHE, G
SILVERANS, RE
ZEGBE, G
JUMAS, JC
机构：
[1] UNIV MONTPELLIER 2,PHYSICOCHIM MAT SOLIDES LAB,F-34060 MONTPELLIER,FRANCE
[2] KATHOLIEKE UNIV LEUVEN,DEPT PHYS,VASTE STOF FYS MAGNETISME LAB,B-3001 LOUVAIN,BELGIUM
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 02期
关键词：
D O I：
10.1063/1.351337
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The dopant and compound forming behavior of As and Au impurities in Ga2Te3 is investigated by the combined application of Mossbauer spectroscopy, x-ray diffraction, optical transmission, and electrical measurements. Arsenic is shown to act as a n-type dopant in Ga2Te3, and a ternary semiconductor AuGa2Te3 is identified. The results allow for a concise description of the ohmic contact formation mechanism in alloyed Au/Te/Au/GaAs and related structures.
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页码：744 / 749
页数：6
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