HIGH-QUALITY NB-ALOXNB JUNCTIONS FOR MICROWAVE RECEIVERS AND SFQ LOGIC DEVICE

被引：29

作者：

KOSHELETS, VP

KOVTONYUK, SA

SERPUCHENKO, IL

FILIPPENKO, LV

SHCHUKIN, AV

机构：

[1] Institute of Radio Engineering and Electronics, USSR Academy of Sciences, Moscow GSP-3 103907

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1991年 / 27卷 / 02期

关键词：

D O I：

10.1109/20.133877

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high quality Nb-AlO(x)-Nb tunnel junctions have been successfully used 1-4 for the creation of the low noise SIS mixer and elaboration of the SQUIDs and SFQ logic devices. In this work the specific capacitance of high quality (V(m) > 50 mV) Nb-AlO(x)-Nb tunnel junctions has been determined by the following methods: i) the measurement of Zero Field Step resonances in specially prepared long Josephson junctions; ii) the definition of the resonant voltages in two-junctions interferometers based on Nb-AlO(x)-Nb junctions. The results obtained by these methods were compared with each other and with the figures calculated from the measurements of tunnel barrier parameters. The application of the developed technological procedure for the fabrication of the SFQ logic devices have been discussed.

引用

页码：3141 / 3144

页数：4

共 21 条

[1] NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS [J].