ELECTRONIC-STRUCTURE OF DEFECTS IN AMORPHOUS ARSENIC

被引：20

作者：

POLLARD, WB ^{[1
]}

JOANNOPOULOS, JD ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW B | 1979年 / 19卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.19.4217

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4217 / 4223

页数：7

共 50 条

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[39] ELECTRONIC-STRUCTURE OF TRIGONAL AND AMORPHOUS SE AND TE [J].

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