1/F NOISE MOS TRANSISTORS

被引：2
作者：
TANAKA, T
NAGANO, K
NAMEKI, N
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1969年 / 8卷 / 08期
关键词：
D O I：
10.1143/JJAP.8.1020
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1020 / &
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