TRANSITION-METAL SILICIDE PRECIPITATION IN SILICON INDUCED BY RAPID THERMAL-PROCESSING AND FREE-SURFACE GETTERING

被引：23

作者：

KOLA, RR

ROZGONYI, GA

LI, J

ROGERS, WB

TAN, TY

BEAN, KE

LINDBERG, K

机构：

[1] DUKE UNIV,DEPT MECH ENGN & MAT SCI,DURHAM,NC 27706

[2] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

[3] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 20期

关键词：

D O I：

10.1063/1.102342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2108 / 2110

页数：3

共 12 条

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[9] ANOMALOUS DIFFUSION AND GETTERING OF TRANSITION-METALS IN SILICON [J].

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[10] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J].

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